bat 18 ... oct-07-1999 1 silicon rf switching diode ? low-loss vhf / uhf switch above 10 mhz ? pin diode with low forward resistance 1 2 3 vps05161 bat 18-05 bat 18-06 bat 18-04 bat 18 eha07004 1 3 2 eha07005 1 3 2 eha07006 1 3 2 13 eha07002 type marking pin configuration package bat 18 bat 18-04 bat 18-05 bat 18-06 a2s aus ass ats 1 = a 1 = a1 1 = a1 1 = c1 2 n.c. 2 = c2 2 = a2 2 = c2 3 = c 3 = c1/a2 3 = c1/2 3 = a1/2 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter symbol value unit diode reverse voltage v r 35 v forward current i f 100 ma operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) r thja 450 k/w 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bat 18 ... oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 20 v i r - - 20 na reverse current v r = 20 v, t a = 60 c i r - - 200 forward voltage i f = 100 ma v f - 0.38 1.2 mv ac characteristics pf diode capacitance v r = 20 v, f = 1 mhz 0.75 - c t 1 forward resistance i f = 5 ma, f = 100 mhz ? r f - 0.4 0.7 - 2 - nh series inductance l s diode capacitance c t = f ( v r ) f = 1mhz 0 0.0 ehd07019 bat 18... c t r v 10 20 v 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pf 2.0 forward resistance r f = f ( i f ) f = 100mhz 10 ehd07020 bat 18... r f f -1 0 10 1 10 2 10 ma -1 10 ? 10 1 10 0
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